SI5515DC-T1-E3
ObsoleteVishay Dale
MOSFET N/P-CH 20V 4.4A/3A 1206-8
SI5515DC-T1-E3
ObsoleteVishay Dale
MOSFET N/P-CH 20V 4.4A/3A 1206-8
Description
General part information
SI5515DC-T1-E3
MOSFET N/P-CH 20V 4.4A/3A 1206-8
Technical Specifications
Parameters and characteristics for this part
| Specification | SI5515DC-T1-E3 |
|---|---|
| Configuration | N, P-Channel |
| Current - Continuous Drain (Id) (Maximum) | 3 A |
| Current - Continuous Drain (Id) (Typical) | 4.4 A |
| Drain to Source Voltage (Vdss) | 20 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Max) | 7.5 nC |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | Flat Leads, 8-SMD |
| Package Name | 1206-8 ChipFET™ |
| Power - Max | 1.1 W |
| Rds On (Max) | 40 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 1 V |
Pricing
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CAD
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Documents
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