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GD50MPS12H

GD50MPS12H

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GeneSiC Semiconductor

DIODE SIL CARB 1200V 92A TO2472

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GD50MPS12H

GD50MPS12H

Active
GeneSiC Semiconductor

DIODE SIL CARB 1200V 92A TO2472

Find alt

Description

General part information

GD50MPS12H

DIODE SIL CARB 1200V 92A TO2472

Technical Specifications

Parameters and characteristics for this part

SpecificationGD50MPS12H
Capacitance1835 pF
Current - Average Rectified (Io)92 A
Current - Reverse Leakage15 µA
Mounting TypeThrough Hole
Operating Temperature - Junction (Max)175 °C
Operating Temperature - Junction (Min)-55 °C
Package / CaseTO-247-2
Package NameTO-247-2
Reverse Recovery Time (trr)0 ns
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)1200 V
Voltage - Forward (Vf) (Max)1.8 V

Pricing

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CAD

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Documents

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