CEFA202-G

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Comchip Technology

DIODE GEN PURP 100V 2A DO214AC

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Comchip Technology

DIODE GEN PURP 100V 2A DO214AC

Technical Specifications

Parameters and characteristics for this part

Specification	CEFA202-G

Current - Average Rectified (Io)	2 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Surface Mount
Operating Temperature - Junction	150 °C
Package / Case	DO-214AC, SMA
Reverse Recovery Time (trr)	25 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-214AC (SMA)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	920 mV

DIODE GEN PURP 100V 2A DO214AC

Part	Reverse Recovery Time (trr)	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Operating Temperature - Junction	Mounting Type	Technology	Speed
Comchip Technology CEFA202-G	25 ns	DO-214AC (SMA)	100 V	DO-214AC, SMA	5 µA	920 mV	2 A	150 °C	Surface Mount	Standard	200 mA, 500 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 100 V 2A Surface Mount DO-214AC (SMA)

Technical documentation and resources