Description
General part information
IQE050N08NM5CGATMA1
The IQE050N08NM5CG is Infineon’s extension of the innovativeSource-Downtechnology. TheOptiMOS™ 5 80 VPQFN 3.3x3.3 Source-Down features 80 V and low RDS(on)of 5.0 mOhm. The revolutionary Source-Down technology introduces a flipped silicon die, which is positioned upside down inside of the components. This adjustment allows the source potential (instead of the drain potential) to be connected to the PCB over the thermal pad. Therefore, it offers several advantages, such as increased thermal capability, advanced power density or improved layout possibilities. Furthermore, the higher efficiency, the reduced active cooling requirements and the effective layout for thermal management are benefits at the system level. Thanks to the new benchmark RDS(on)and the innovative layout capacities enable the Source-Down concept to have a leading position in temperature management. The Source-Down portfolio is addressing applications, such asDrives,Telecom,SMPSorServer. The new technology can be found in two different footprints for now:Source-DownStandard-Gate andSource-DownCenter-Gate (optimized for parallelization).
Technical Specifications
Parameters and characteristics for this part
| Specification | IQE050N08NM5CGATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 16 A |
| Current - Continuous Drain (Id) (Tc) | 101 A |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On) | 6 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 43.2 nC |
| Input Capacitance (Ciss) (Max) | 2900 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerTDFN |
| Package Name | PG-TTFN-9-1 |
| Power Dissipation (Max) | 2.5 W, 100 W |
| Rds On (Max) | 5 mOhm, 5 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3.8 V |
Pricing
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CAD
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