TW015Z120C,S1F
ActiveToshiba Semiconductor and Storage
SIC MOSFETS G3 1200V SIC-MOSFET TO-247-4L 15MOHM
TW015Z120C,S1F
ActiveToshiba Semiconductor and Storage
SIC MOSFETS G3 1200V SIC-MOSFET TO-247-4L 15MOHM
Description
General part information
TW015Z120C,S1F
SIC MOSFETS G3 1200V SIC-MOSFET TO-247-4L 15MOHM
Technical Specifications
Parameters and characteristics for this part
| Specification | TW015Z120C,S1F |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 100 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 158 nC |
| Input Capacitance (Ciss) (Max) | 6000 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 175 °C |
| Package / Case | TO-247-4 |
| Package Name | TO-247-4L(X) |
| Power Dissipation (Max) | 431 W |
| Rds On (Max) | 21 mOhm |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) Negative | -10 V |
| Vgs (Max) Positive | 25 V |
| Vgs(th) (Max) | 5 V |
Pricing
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