T5096P-SD-F
ActiveMitsubishi Electric Europe B.V.
SILICON NPN PHOTOTRANSISTER, 910
T5096P-SD-F
ActiveMitsubishi Electric Europe B.V.
SILICON NPN PHOTOTRANSISTER, 910
Description
General part information
T5096P-SD-F
SILICON NPN PHOTOTRANSISTER, 910
Technical Specifications
Parameters and characteristics for this part
| Specification | T5096P-SD-F |
|---|---|
| Current - Collector (Ic) (Max) | 0.05 mA |
| Current - Dark (Id) (Max) | 50 nA |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 125 °C |
| Operating Temperature (Min) | -55 °C |
| Orientation | Top View |
| Package / Case | Die |
| Viewing Angle | 120 ° |
| Voltage - Collector Emitter Breakdown (Max) | 85 V |
| Wavelength | 910 nm |
Pricing
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CAD
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Documents
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