TPH4R50ANH1,LQ
ActiveToshiba Semiconductor and Storage
MOSFET 100V 4.5MOHM SOP-ADV(N)
TPH4R50ANH1,LQ
ActiveToshiba Semiconductor and Storage
MOSFET 100V 4.5MOHM SOP-ADV(N)
Description
General part information
TPH4R50ANH1,LQ
MOSFET 100V 4.5MOHM SOP-ADV(N)
Technical Specifications
Parameters and characteristics for this part
| Specification | TPH4R50ANH1,LQ |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 92 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 58 nC, 58 nC |
| Input Capacitance (Ciss) (Max) | 5200 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 8-PowerTDFN |
| Package Length | 5 mm |
| Package Name | 8-SOP Advance |
| Package Width | 5.75 mm |
| Power Dissipation (Max) | 800 mW |
| Rds On (Max) | 4.5 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
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CAD
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