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FDN338P_G

FDN338P_G

Obsolete
ON Semiconductor

MOSFET P-CH 20V 1.6A SUPERSOT3

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FDN338P_G

FDN338P_G

Obsolete
ON Semiconductor

MOSFET P-CH 20V 1.6A SUPERSOT3

Find alt

Description

General part information

FDN338P_G

MOSFET P-CH 20V 1.6A SUPERSOT3

Technical Specifications

Parameters and characteristics for this part

SpecificationFDN338P_G
Current - Continuous Drain (Id) (Ta)1.6 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On)2.5 V
Drive Voltage (Min Rds On)4.5 V
FET TypeP-Channel
Gate Charge (Max)6.2 nC
Input Capacitance (Ciss) (Max)451 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-236-3, SOT-23-3, SC-59
Package NameSOT-23-3
Power Dissipation (Max)500 mW
Rds On (Max)115 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)8 V
Vgs(th) (Max)1.5 V

Pricing

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