Specification	E4M0025075K1

Current - Continuous Drain (Id) (Tc)	80 A
Drain to Source Voltage (Vdss)	750 V
Drive Voltage (Max Rds On, Min Rds On)	15 V
FET Type	N-Channel
Gate Charge (Max)	119 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	3055 pF
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-247-4
Package Name	TO-247-4L
Power Dissipation (Max)	262 W
Qualification	AEC-Q101
Rds On (Max)	34 mOhm
Technology	SiCFET (Silicon Carbide), SiC (Silicon Carbide Junction Transistor)
Vgs (Max) Negative	-8 V
Vgs (Max) Positive	19 V
Vgs(th) (Max)	3.8 V

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