
GD30MPS12J-TR
ObsoleteGeneSiC Semiconductor
DIODE SIL CARB 1200V 59A TO2637

GD30MPS12J-TR
ObsoleteGeneSiC Semiconductor
DIODE SIL CARB 1200V 59A TO2637
Description
General part information
GD30MPS12J-TR
DIODE SIL CARB 1200V 59A TO2637
Technical Specifications
Parameters and characteristics for this part
| Specification | GD30MPS12J-TR |
|---|---|
| Capacitance | 1101 pF |
| Current - Average Rectified (Io) | 59 A |
| Current - Reverse Leakage | 20 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction (Max) | 175 °C |
| Operating Temperature - Junction (Min) | -55 °C |
| Package Leads | 7 Leads |
| Package Name | D2PAK, TO-263-7 |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) | 1.8 V |
Pricing
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CAD
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Documents
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