EM6M1T2R
NRNDRohm Semiconductor
MOSFET N/P-CH 30V/20V 0.1A EMT6
EM6M1T2R
NRNDRohm Semiconductor
MOSFET N/P-CH 30V/20V 0.1A EMT6
Description
General part information
EM6M1T2R
MOSFET N/P-CH 30V/20V 0.1A EMT6
Technical Specifications
Parameters and characteristics for this part
| Specification | EM6M1T2R |
|---|---|
| Configuration | N, P-Channel |
| Current - Continuous Drain (Id) (Maximum) | 200 mA |
| Current - Continuous Drain (Id) (Typical) | 100 mA |
| Drain to Source Voltage (Vdss) (Option 1) | 30 V |
| Drain to Source Voltage (Vdss) (Option 2) | 20 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Max) | 0.9 nC |
| Input Capacitance (Ciss) (Max) | 13 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SOT-563, SOT-666 |
| Package Name | EMT6 |
| Power - Max | 150 mW |
| Rds On (Max) | 8 Ohm |
| Technology | MOSFET (Metal Oxide) |
Pricing
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CAD
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