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SMBT2222AE6327HTSA1

SMBT2222AE6327HTSA1

LTB
INFINEON

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 40 V, 600 MA, 330 MW, SOT-23, SURFACE MOUNT

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SMBT2222AE6327HTSA1

SMBT2222AE6327HTSA1

LTB
INFINEON

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 40 V, 600 MA, 330 MW, SOT-23, SURFACE MOUNT

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Description

General part information

SMBT2222AE6327HTSA1

The SMBT 2222A E6327 is a NPN silicon switching Bipolar Transistor with low collector-emitter saturation voltage.

Technical Specifications

Parameters and characteristics for this part

SpecificationSMBT2222AE6327HTSA1
Current - Collector (Ic) (Max)0.6 mA
Current - Collector Cutoff (Max)0.01 µA
DC Current Gain (hFE) (Min)100
Frequency - Transition300 MHz
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseTO-236-3, SOT-23-3, SC-59
Package NamePG-SOT23
Power - Max330 mW
Transistor TypeNPN
Vce Saturation (Max)1 V
Voltage - Collector Emitter Breakdown (Max)40 V

Pricing

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CAD

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Documents

Technical documentation and resources

    SMBT2222AE6327HTSA1 | INFINEON | Zenode.ai