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MICRON MT53E512M64D2HJ-046 WT:B

MT53E512M64D2HJ-046 AIT:B

LTB
Micron Technology Inc.

DRAM, 32GBIT, 2.133GHZ, TFBGA-556 ROHS COMPLIANT: YES

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MICRON MT53E512M64D2HJ-046 WT:B

MT53E512M64D2HJ-046 AIT:B

LTB
Micron Technology Inc.

DRAM, 32GBIT, 2.133GHZ, TFBGA-556 ROHS COMPLIANT: YES

Find alt

Description

General part information

MT53E512M64D2HJ-046 AIT:B

DRAM, 32GBIT, 2.133GHZ, TFBGA-556 ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

SpecificationMT53E512M64D2HJ-046 AIT:B
Access Time3.5 ns
Clock Frequency2.133 GHz
GradeAutomotive
Memory Depth512 M
Memory FormatDRAM
Memory Interface (Type)Parallel
Memory Size4 GByte
Memory TypeVolatile
Memory Width64 bit
Mounting TypeSurface Mount
Operating Temperature (Max)95 °C
Operating Temperature (Min)-40 °C
Package / Case556-TFBGA
Package Length12.4 mm
Package Name556-WFBGA
Package Width12.4 mm
QualificationAEC-Q100
TechnologySDRAM - Mobile LPDDR4X
Voltage - Supply (Maximum)1.17 V
Voltage - Supply (Minimum)1.06 V
Write Cycle Time - Page18 ns
Write Cycle Time - Word18 ns

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