FDD10AN06A0Q
ActiveON Semiconductor
1-ELEMENT, N-CHANNEL
FDD10AN06A0Q
ActiveON Semiconductor
1-ELEMENT, N-CHANNEL
Description
General part information
FDD10AN06A0Q
1-ELEMENT, N-CHANNEL
Technical Specifications
Parameters and characteristics for this part
| Specification | FDD10AN06A0Q |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 11 A |
| Drain to Source Voltage (Vdss) | 60 V |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) | 1840 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Package Name | TO-252AA |
| Power Dissipation (Max) | 135 W |
| Rds On (Max) | 10.5 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
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CAD
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Documents
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