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BY25Q32ESMIG(R)

BY25Q32ESMIG(R)

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BYTe Semiconductor

32 MBIT, 3.0V (2.7V TO 3.6V), -4

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BY25Q32ESMIG(R)

BY25Q32ESMIG(R)

Active
BYTe Semiconductor

32 MBIT, 3.0V (2.7V TO 3.6V), -4

Find alt

Description

General part information

BY25Q32ESMIG(R)

32 MBIT, 3.0V (2.7V TO 3.6V), -4

Technical Specifications

Parameters and characteristics for this part

SpecificationBY25Q32ESMIG(R)
Access Time7 ns
Clock Frequency120 MHz
Memory Depth4 M
Memory FormatFLASH
Memory Interface (Type)SPI - Quad I/O
Memory Size4 MB
Memory TypeNon-Volatile
Memory Width8 bit
Mounting TypeSurface Mount
Operating Temperature (Max)85 °C
Operating Temperature (Min)-40 °C
Package / Case8-UFDFN Exposed Pad
Package Length2 mm
Package Name8-USON
Package Width3 mm
TechnologyFLASH - NOR
Voltage - Supply (Maximum)3.6 V
Voltage - Supply (Minimum)2.7 V
Write Cycle Time - Page2.4 ms
Write Cycle Time - Word100 µs

Pricing

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CAD

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Documents

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