CY62167ELL-45ZXIT is a high-performance CMOS static RAM organized as 1 M words by 16 bits/2 M words by 8 bits. This device features an advanced circuit design to provide an ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications. The device also has an automatic power-down feature that reduces power consumption when addresses are not toggling. Place the device into standby mode when deselected (active low CE1 HIGH, or CE2 LOW, or both BHE and active low BLE are HIGH). To write to the device, take chip enables (active low CE1 LOW and CE2 HIGH) and write enable (active low WE) input LOW. If byte low enable (active low BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A19). If byte high enable (active low BHE) is LOW, then data from the I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A19).