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BY25FQ16ELWIG(R)

BY25FQ16ELWIG(R)

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BYTe Semiconductor

16 MBIT, 1.8V (1.65V TO 1.95V),

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BY25FQ16ELWIG(R)

BY25FQ16ELWIG(R)

Active
BYTe Semiconductor

16 MBIT, 1.8V (1.65V TO 1.95V),

Find alt

Description

General part information

BY25FQ16ELWIG(R)

16 MBIT, 1.8V (1.65V TO 1.95V),

Technical Specifications

Parameters and characteristics for this part

SpecificationBY25FQ16ELWIG(R)
Access Time4 ns
Clock Frequency166 MHz
Memory Depth2 M
Memory FormatFLASH
Memory Interface (Type)SPI - Quad I/O, QPI, DTR
Memory Size16 Mb
Memory TypeNon-Volatile
Memory Width8 bit
Mounting TypeSurface Mount
Operating Temperature (Max)85 °C
Operating Temperature (Min)-40 °C
Package / Case8-WDFN Exposed Pad
Package Length5 mm
Package Name8-WSON
Package Width6 mm
TechnologyFLASH - NOR
Voltage - Supply (Maximum)1.95 V
Voltage - Supply (Minimum)1.65 V
Write Cycle Time - Page1.5 ms
Write Cycle Time - Word100 µs

Pricing

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CAD

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Documents

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