RBA80N04DANS-4UA04#HB0
ActiveRenesas Electronics Corporation
RBA80N04DANS-4UA04#HB0
RBA80N04DANS-4UA04#HB0
ActiveRenesas Electronics Corporation
RBA80N04DANS-4UA04#HB0
Description
General part information
RBA80N04DANS-4UA04#HB0
RBA80N04DANS-4UA04#HB0
Technical Specifications
Parameters and characteristics for this part
| Specification | RBA80N04DANS-4UA04#HB0 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 80 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 40 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 2100 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 175 °C |
| Package / Case | 8-PowerTDFN |
| Package Length | 4.9 mm |
| Package Name | 8-DFN |
| Package Width | 5.75 mm |
| Power Dissipation (Max) | 71 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 3.5 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
No documents available