DMN10H220LVT-7

Active

Diodes Inc

MOSFET, N-CH, 100V, 2.24A, TSOT-26 ROHS COMPLIANT: YES

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsProduct Change Notice EN Recommended Soldering Techniques +2

DMN10H220LVT-7

Active

Diodes Inc

MOSFET, N-CH, 100V, 2.24A, TSOT-26 ROHS COMPLIANT: YES

Deep-Dive with AI

DocumentsProduct Change Notice EN Recommended Soldering Techniques +2

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	DMN10H220LVT-7

Current - Continuous Drain (Id) @ 25°C	1.87 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	8.3 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	401 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power Dissipation (Max)	1.67 W
Rds On (Max) @ Id, Vgs [Max]	220 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	2.5 V

DMN10H220LFDF Series

100V N-Channel Enhancement Mode MOSFET

Part	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Configuration	Power - Max [Max]	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Supplier Device Package	Mounting Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]
Diodes Inc DMN10H220LPDW-13	2.5 V	6.7 nC	2 N-Channel (Dual)	2.2 W	100 V	-55 °C	150 °C	MOSFET (Metal Oxide)	PowerDI5060-8 (Type R)	Surface Mount Wettable Flank	8-PowerTDFN	8 A	222 mOhm	384 pF
Diodes Inc DMN10H220LVT-7	2.5 V				100 V	-55 °C	150 °C	MOSFET (Metal Oxide)		Surface Mount	SOT-23-6 Thin TSOT-23-6	1.87 A			220 mOhm	4.5 V 10 V	N-Channel	16 V	401 pF	1.67 W	8.3 nC
Diodes Inc DMN10H220LFVW-7	2.5 V	6.7 nC			100 V	-55 °C	150 °C	MOSFET (Metal Oxide)	PowerDI3333-8 (SWP) Type UX	Surface Mount Wettable Flank	8-PowerVDFN	11 A	222 mOhm	360 pF		4.5 V 10 V	N-Channel	20 V		2.4 W 41 W
Diodes Inc DMN10H220L-7	2.5 V				100 V	-55 °C	150 °C	MOSFET (Metal Oxide)	SOT-23-3	Surface Mount	SC-59 SOT-23-3 TO-236-3	1.4 A			220 mOhm	4.5 V 10 V	N-Channel	16 V	401 pF	1.3 W	8.3 nC
Diodes Inc DMN10H099SFG-13	3 V				100 V	-55 °C	150 °C	MOSFET (Metal Oxide)	POWERDI3333-8	Surface Mount	8-PowerVDFN	4.2 A	80 mOhm			6 V 10 V	N-Channel	20 V	1172 pF	980 mW
Diodes Inc DMN10H170SVTQ-13	3 V	9.7 nC			100 V	-55 °C	150 °C	MOSFET (Metal Oxide)		Surface Mount	SOT-23-6 Thin TSOT-23-6	2.6 A	160 mOhm	1167 pF		4.5 V 10 V	N-Channel	20 V		1.2 W
Diodes Inc DMN10H220LQ-13	2.5 V				100 V	-55 °C	150 °C	MOSFET (Metal Oxide)	SOT-23-3	Surface Mount	SC-59 SOT-23-3 TO-236-3	1.6 A			220 mOhm	4.5 V 10 V	N-Channel	16 V	401 pF	1.3 W	8.3 nC
Diodes Inc DMN10H120SFG-13	3 V				100 V	-55 °C	150 °C	MOSFET (Metal Oxide)	POWERDI3333-8	Surface Mount	8-PowerVDFN	3.8 A	110 mOhm	549 pF		6 V 10 V	N-Channel	20 V		1 W	10.6 nC
Diodes Inc DMN10H220LVT-13	2.5 V				100 V	-55 °C	150 °C	MOSFET (Metal Oxide)		Surface Mount	SOT-23-6 Thin TSOT-23-6	1.87 A			220 mOhm	4.5 V 10 V	N-Channel	16 V	401 pF	1.67 W	8.3 nC
Diodes Inc DMN10H170SFDE-13	3 V	9.7 nC			100 V	-55 °C	150 °C	MOSFET (Metal Oxide)	U-DFN2020-6 (Type E)	Surface Mount	6-PowerUDFN	2.9 A	160 mOhm	1167 pF		4.5 V 10 V	N-Channel	20 V		660 mW

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.54
		10	$ 0.46
		100	$ 0.32
		500	$ 0.25
		1000	$ 0.20
	Digi-Reel®	1	$ 0.54
		10	$ 0.46
		100	$ 0.32
		500	$ 0.25
		1000	$ 0.20
	Tape & Reel (TR)	3000	$ 0.18
		6000	$ 0.17
		9000	$ 0.16
		30000	$ 0.16
Newark	Each (Supplied on Cut Tape)	1	$ 0.89
		10	$ 0.59
		25	$ 0.54
		50	$ 0.48
		100	$ 0.43
		250	$ 0.39
		500	$ 0.35
		1000	$ 0.32

Description

General part information

DMN10H220LFDF Series

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Documents

Technical documentation and resources

DMN10H220LVT-7

Deep-Dive with AI

DMN10H220LVT-7

Deep-Dive with AI

Technical Specifications

DMN10H220LFDF Series

Pricing

Description

DMN10H220LFDF Series

Documents

Product Change Notice EN

Recommended Soldering Techniques

Package PDF

Datasheet

DMN10H220LFDF Series