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IRF8301MTRPBF - IRF6614TR1PBF

IRF8301MTRPBF

Obsolete
Infineon Technologies

STRONGIRFET™ N-CHANNEL POWER MOSFET ; DIRECTFET™ M PACKAGE; 1.5 MOHM;

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IRF8301MTRPBF - IRF6614TR1PBF

IRF8301MTRPBF

Obsolete
Infineon Technologies

STRONGIRFET™ N-CHANNEL POWER MOSFET ; DIRECTFET™ M PACKAGE; 1.5 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRF8301MTRPBF
Current - Continuous Drain (Id) @ 25°C34 A, 192 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs77 nC
Input Capacitance (Ciss) (Max) @ Vds6140 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 °C
Package / CaseDirectFET™ Isometric MT
Power Dissipation (Max)2.8 W, 89 W
Rds On (Max) @ Id, Vgs [Max]1.5 mOhm
Supplier Device PackageDIRECTFET™ MT
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.35 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

IRF8301 Series

The StrongIRFET™ power MOSFET family is optimized for low RDS(on)and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Documents

Technical documentation and resources