STW23NM60ND

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STMicroelectronics

MOSFET N-CH 600V 19.5A TO247-3

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STMicroelectronics

MOSFET N-CH 600V 19.5A TO247-3

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General part information

N-Channel 600 V 19.5A (Tc) 150W (Tc) Through Hole TO-247-3

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Parameters and characteristics commom to parts in this series

Specification	STW23NM60ND	STW23N Series

Current - Continuous Drain (Id) @ 25°C	19.5 A	17 - 19.5 A
Drain to Source Voltage (Vdss)	600 V	500 - 600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V	10 V
FET Type	N-Channel	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	70 nC	45 - 70 nC
Input Capacitance (Ciss) (Max) @ Vds	2050 pF	1330 - 2050 pF
Mounting Type	Through Hole	Through Hole
Operating Temperature	150 °C	150 °C
Package / Case	TO-247-3	TO-247-3
Power Dissipation (Max)	150 W	125 - 150 W
Rds On (Max) @ Id, Vgs	180 mOhm	180 - 190 mOhm
Supplier Device Package	TO-247-3	TO-247-3
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Vgs (Max)	25 V	25 V
Vgs(th) (Max) @ Id	5 V	4 - 5 V

MOSFET N-CH 500V 17A TO247-3

Part	Vgs (Max)	Mounting Type	Package / Case	FET Type	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Vgs(th) (Max) @ Id	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]
STMicroelectronics STW23NM50N	25 V	Through Hole	TO-247-3	N-Channel	190 mOhm	125 W	10 V	500 V	1330 pF	MOSFET (Metal Oxide)	4 V	150 °C	17 A	TO-247-3	45 nC
STMicroelectronics STW23NM60N	25 V	Through Hole	TO-247-3	N-Channel	180 mOhm	150 W	10 V	600 V	2050 pF	MOSFET (Metal Oxide)	4 V	150 °C	19 A	TO-247-3	60 nC
STMicroelectronics STW23NM60ND	25 V	Through Hole	TO-247-3	N-Channel	180 mOhm	150 W	10 V	600 V	2050 pF	MOSFET (Metal Oxide)	5 V	150 °C	19.5 A	TO-247-3	70 nC