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5LN01SS-TL-E

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Sanyo

N-CHANNEL SILICON MOSFET

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5LN01SS-TL-E

Active
Sanyo

N-CHANNEL SILICON MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification5LN01SS-TL-E
Current - Continuous Drain (Id) @ 25°C100 mA
Drain to Source Voltage (Vdss)50 V
Drive Voltage (Max Rds On, Min Rds On) [Max]1.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]4 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs1.57 nC
Input Capacitance (Ciss) (Max) @ Vds6600 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseSC-81
Power Dissipation (Max) [Max]150 mW
Rds On (Max) @ Id, Vgs7.8 Ohm
Supplier Device Package3-SSFP
TechnologyMOSFET (Metal Oxide)
Vgs (Max)10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 3806$ 0.08

Description

General part information

5LN01SS-TL-E

N-Channel 50 V 100mA (Ta) 150mW (Ta) Surface Mount 3-SSFP

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