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Description

General part information

2SB1560

Bipolar (BJT) Transistor PNP - Darlington 150 V 10 A 50MHz 100 W Through Hole TO-3P

Technical Specifications

Parameters and characteristics for this part

Specification2SB1560
Current - Collector (Ic) (Max)10 A
Current - Collector Cutoff (Max)100 µA
DC Current Gain (hFE) (Min)5000
Frequency - Transition50 MHz
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-3P-3, SC-65-3
Package NameTO-3P
Power - Max100 VA
Transistor TypePNP, Darlington
Vce Saturation (Max)2.5 V
Voltage - Collector Emitter Breakdown (Max)150 V

Pricing

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