IRF7901D1TRPBF

Obsolete

Infineon Technologies

MOSFET 2N-CH 30V 6.2A 8SO

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Obsolete

Infineon Technologies

MOSFET 2N-CH 30V 6.2A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	IRF7901D1TRPBF

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	6.2 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	10.5 nC
Input Capacitance (Ciss) (Max) @ Vds	780 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs	38 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Current - Continuous Drain (Id) @ 25°C	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Technology	Vgs(th) (Max) @ Id	Package / Case	Package / Case [y]	Package / Case [x]	Configuration	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	FET Feature
Infineon Technologies IRF7901D1TRPBF	6.2 A	2 W	10.5 nC	780 pF	8-SO	38 mOhm	30 V	MOSFET (Metal Oxide)	1 V	8-SOIC	3.9 mm	0.154 in	2 N-Channel (Dual)	-55 °C	150 °C	Surface Mount	Logic Level Gate
Infineon Technologies IRF7901D1TR	6.2 A	2 W	10.5 nC	780 pF	8-SO	38 mOhm	30 V	MOSFET (Metal Oxide)	1 V	8-SOIC	3.9 mm	0.154 in	2 N-Channel (Dual)	-55 °C	150 °C	Surface Mount	Logic Level Gate
Infineon Technologies IRF7901D1	6.2 A	2 W	10.5 nC	780 pF	8-SO	38 mOhm	30 V	MOSFET (Metal Oxide)	1 V	8-SOIC	3.9 mm	0.154 in	2 N-Channel (Dual)	-55 °C	150 °C	Surface Mount	Logic Level Gate

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$