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IRFB5615PBFXKMA1

IRFB5615PBFXKMA1

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INFINEON

MOSFET N-CH

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IRFB5615PBFXKMA1

IRFB5615PBFXKMA1

Active
INFINEON

MOSFET N-CH

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Description

General part information

IRFB5615PBFXKMA1

MOSFET N-CH

Technical Specifications

Parameters and characteristics for this part

SpecificationIRFB5615PBFXKMA1
Current - Continuous Drain (Id) (Tc)35 A
Drain to Source Voltage (Vdss)150 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)40 nC
Input Capacitance (Ciss) (Max)1750 pF
Mounting TypeThrough Hole
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-220-3
Package NameTO-220AB
Power Dissipation (Max)144 W
Rds On (Max)39 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)5 V

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources