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JAN1N5313-1/TR

JAN1N5313-1/TR

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Microchip Technology

DIODE CUR REG 100V 4.73MA 500MW

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JAN1N5313-1/TR

JAN1N5313-1/TR

Active
Microchip Technology

DIODE CUR REG 100V 4.73MA 500MW

Find alt

Description

General part information

JAN1N5313-1/TR

DIODE CUR REG 100V 4.73MA 500MW

Technical Specifications

Parameters and characteristics for this part

SpecificationJAN1N5313-1/TR
GradeMilitary
Mounting TypeThrough Hole
Operating Temperature (Max)175 °C
Operating Temperature (Min)-65 °C
Package / CaseDO-7, Axial, DO-204AA
Package NameDO-7
Power - Max0.5 W
Qualification463, MIL-PRF-19500
Regulator Current (Max)4.73 mA
Voltage - Anode - Cathode (Vak)(Max)100 V
Voltage - Limiting (Max)2.75 V

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