ISZ56DP15LMATMA1
ActiveP-CHANNEL MOSFETS IN LOGIC LEVEL, REDUCING DESIGN COMPLEXITY IN MEDIUM AND LOW POWER APPLICATIONS
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ISZ56DP15LMATMA1
ActiveP-CHANNEL MOSFETS IN LOGIC LEVEL, REDUCING DESIGN COMPLEXITY IN MEDIUM AND LOW POWER APPLICATIONS
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Technical Specifications
Parameters and characteristics for this part
| Specification | ISZ56DP15LMATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1.35 A, 6.7 A |
| Drain to Source Voltage (Vdss) | 150 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 40 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Rds On (Max) @ Id, Vgs | 560 mOhm |
| Supplier Device Package | PG-TSDSON-8 FL |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.26 | |
| 10 | $ 0.89 | |||
| 100 | $ 0.69 | |||
| 500 | $ 0.55 | |||
| 1000 | $ 0.49 | |||
| 2000 | $ 0.49 | |||
| Digi-Reel® | 1 | $ 1.26 | ||
| 10 | $ 0.89 | |||
| 100 | $ 0.69 | |||
| 500 | $ 0.55 | |||
| 1000 | $ 0.49 | |||
| 2000 | $ 0.49 | |||
| Tape & Reel (TR) | 5000 | $ 0.40 | ||
Description
General part information
ISZ56DP15 Series
OptiMOS™ P-channel MOSFETs150 V inPQFN 3.3x3.3package represents the new technology targeted forbattery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in logic level featuring a wide RDS(on)range and improves efficiency at low loads due to low Qg.
Documents
Technical documentation and resources