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GT110N06M

GT110N06M

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Goford Semiconductor

MOSFET N-CH 60V 45A 52W 9M(MAX)@

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GT110N06M

GT110N06M

Active
Goford Semiconductor

MOSFET N-CH 60V 45A 52W 9M(MAX)@

Find alt

Description

General part information

GT110N06M

MOSFET N-CH 60V 45A 52W 9M(MAX)@

Technical Specifications

Parameters and characteristics for this part

SpecificationGT110N06M
Current - Continuous Drain (Id) (Tc)45 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)31 nC
Input Capacitance (Ciss) (Max)1200 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package NameTO-263
Power Dissipation (Max)52 W
Rds On (Max)9 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.4 V

Pricing

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CAD

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Documents

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