Description
General part information
IPI90R800C3
Replacement forCoolMOS™ C3isCoolMOS™ P7 900V CoolMOS™ C3is Infineon's third series of CoolMOS™ with market entry in 2001. C3 is the "working horse" of the portfolio.
Technical Specifications
Parameters and characteristics for this part
| Specification | IPI90R800C3 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 6.9 A, 6.9 A |
| Drain to Source Voltage (Vdss) | 900 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 42 nC |
| Input Capacitance (Ciss) (Max) | 1100 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-262AA, I2PAK, TO-262-3 Long Leads |
| Package Name | PG-TO262-3 |
| Power Dissipation (Max) | 104 W |
| Rds On (Max) | 800 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources