
S6D20065D
ActiveSMC Diode Solutions
SILICON CARBIDE DIODE 650V, 20A,

S6D20065D
ActiveSMC Diode Solutions
SILICON CARBIDE DIODE 650V, 20A,
Description
General part information
S6D20065D
SILICON CARBIDE DIODE 650V, 20A,
Technical Specifications
Parameters and characteristics for this part
| Specification | S6D20065D |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 45 A |
| Current - Reverse Leakage | 40 µA |
| Diode Configuration | Common Cathode |
| Diode Pair Count | 1 pair |
| Mounting Type | Through Hole |
| Operating Temperature - Junction (Max) | 175 °C |
| Operating Temperature - Junction (Min) | -55 °C |
| Package / Case | TO-247-3 |
| Package Name | TO-247AD |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Speed - Fast Recovery (Minimum) | 500 mA |
| Speed - Recovery Current | 500 mA, 500 mA |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) | 1.5 V |
Pricing
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CAD
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Documents
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