DMN2310UFD-7

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Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

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DMN2310UFD-7

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Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

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Technical Specifications

Parameters and characteristics for this part

Specification	DMN2310UFD-7

Current - Continuous Drain (Id) @ 25°C	1.7 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	0.7 nC
Input Capacitance (Ciss) (Max) @ Vds	38 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	3-PowerUDFN
Power Dissipation (Max) [Max]	670 mW
Supplier Device Package	U-DFN1212-3 (Type C)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	950 mV

DMN2310UTQ Series

N-Channel Enhancement Mode MOSFET

Part	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Supplier Device Package	Qualification	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Vgs (Max)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	FET Type	Technology	Current - Continuous Drain (Id) @ 25°C	Grade	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max) [Max]
Diodes Inc DMN2310UTQ-7	1.8 V 4.5 V	Surface Mount	SOT-523	AEC-Q101	290 mW	0.7 nC	20 V	38 pF	SOT-523	8 V	950 mV	240 mOhm	N-Channel	MOSFET (Metal Oxide)	1.2 A	Automotive	-55 °C	150 °C
Diodes Inc DMN2310UWQ-7	1.8 V 4.5 V	Surface Mount	SOT-323	AEC-Q101	450 mW	0.7 nC	20 V	38 pF	SC-70 SOT-323	8 V	950 mV		N-Channel	MOSFET (Metal Oxide)	1.3 A	Automotive	-55 °C	150 °C	200 mOhm
Diodes Inc DMN2310UWQ-13	1.8 V 4.5 V	Surface Mount	SOT-323	AEC-Q101	450 mW	0.7 nC	20 V	38 pF	SC-70 SOT-323	8 V	950 mV		N-Channel	MOSFET (Metal Oxide)	1.3 A	Automotive	-55 °C	150 °C	200 mOhm
Diodes Inc DMN2310UW-7	1.8 V 4.5 V	Surface Mount	SOT-323		450 mW	0.7 nC	20 V	38 pF	SC-70 SOT-323	8 V	950 mV		N-Channel	MOSFET (Metal Oxide)	1.3 A		-55 °C	150 °C	200 mOhm
Diodes Inc DMN2310UFD-7	1.5 V 4.5 V	Surface Mount	U-DFN1212-3 (Type C)			0.7 nC	20 V	38 pF	3-PowerUDFN	8 V	950 mV		N-Channel	MOSFET (Metal Oxide)	1.7 A		-55 °C	150 °C		670 mW

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	3000	$ 0.07
		6000	$ 0.07
		9000	$ 0.06
		30000	$ 0.06
		75000	$ 0.05
		150000	$ 0.05

Description

General part information

DMN2310UTQ Series

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

DMN2310UFD-7

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DMN2310UFD-7

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Technical Specifications

DMN2310UTQ Series

Pricing

Description

DMN2310UTQ Series

Documents

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Datasheet

Datasheet

DMN2310UTQ Series