STU2LN60K3

Active

STMicroelectronics

MOSFET N CH 600V 2A IPAK

Search across all available documentation for this part.

Active

STMicroelectronics

MOSFET N CH 600V 2A IPAK

Technical Specifications

Parameters and characteristics for this part

Specification	STU2LN60K3

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12 nC
Input Capacitance (Ciss) (Max) @ Vds	235 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	45 W
Rds On (Max) @ Id, Vgs	4.5 Ohm
Supplier Device Package	TO-251 (IPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

MOSFET N CH 600V 2A IPAK

Part	Mounting Type	FET Type	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Package / Case	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Operating Temperature	Vgs (Max)
STMicroelectronics STU2LN60K3	Through Hole	N-Channel	TO-251 (IPAK)	10 V	MOSFET (Metal Oxide)	12 nC	2 A	4.5 Ohm	IPAK, TO-251-3 Short Leads, TO-251AA	600 V	235 pF	45 W	4.5 V	150 °C	30 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 2A (Tc) 45W (Tc) Through Hole TO-251 (IPAK)

Technical documentation and resources