Specification	RS6G122CGTB1

Current - Continuous Drain (Id) (Ta)	225 A
Current - Continuous Drain (Id) (Tc)	120 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	60 nC
Input Capacitance (Ciss) (Max)	3850 pF, 3850 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-PowerTDFN
Package Name	8-HSOP
Power Dissipation (Max)	3.6 W, 125 W
Rds On (Max)	1.19 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

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