BZX884B11L-HG3-08
ActiveVishay General Semiconductor - Diodes Division
DIODE ZENER 11V 300MW DFN1006-2A
BZX884B11L-HG3-08
ActiveVishay General Semiconductor - Diodes Division
DIODE ZENER 11V 300MW DFN1006-2A
Description
General part information
BZX884B11L-HG3-08
DIODE ZENER 11V 300MW DFN1006-2A
Technical Specifications
Parameters and characteristics for this part
| Specification | BZX884B11L-HG3-08 |
|---|---|
| Current - Reverse Leakage | 100 nA |
| Grade | Automotive |
| Impedance (Max) (Zzt) | 20 Ohms |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 0402 (1006 Metric) |
| Package Name | DFN1006-2A |
| Power - Max | 300 mW |
| Qualification | AEC-Q101 |
| Tolerance | 2 % |
| Voltage - Forward (Vf) (Max) | 900 mV |
| Voltage - Zener (Nom) (Vz) | 11 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources