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BAW56SRAZ

BAW56SRAZ

Active
NXP USA Inc.

DIODE ARR GP 90V 375MA DFN1412-6

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BAW56SRAZ

BAW56SRAZ

Active
NXP USA Inc.

DIODE ARR GP 90V 375MA DFN1412-6

Find alt

Description

General part information

BAW56SRAZ

DIODE ARR GP 90V 375MA DFN1412-6

Technical Specifications

Parameters and characteristics for this part

SpecificationBAW56SRAZ
Current - Average Rectified (Io) (per Diode)375 mA
Current - Reverse Leakage500 nA
Diode ConfigurationCommon Anode
Diode Pair Count2 pair
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature - Junction (Max)150 °C
Package / Case6-XFDFN Exposed Pad
Package NameDFN1412-6
QualificationAEC-Q101
Reverse Recovery Time (trr)4 ns
Speed - Fast Recovery (Maximum)500 ns
Speed - Fast Recovery (Minimum)200 mA
TechnologyStandard
Voltage - DC Reverse (Vr) (Max)90 V
Voltage - Forward (Vf) (Max)1.25 V

Pricing

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CAD

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Documents

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