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XP6NA8R0CST

XP6NA8R0CST

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YAGEO

MOSFET N CH 60V 18.5A SPPAK5X6

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XP6NA8R0CST

XP6NA8R0CST

Active
YAGEO

MOSFET N CH 60V 18.5A SPPAK5X6

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Description

General part information

XP6NA8R0CST

MOSFET N CH 60V 18.5A SPPAK5X6

Technical Specifications

Parameters and characteristics for this part

SpecificationXP6NA8R0CST
Current - Continuous Drain (Id) (Ta)18.5 A
Current - Continuous Drain (Id) (Tc)69 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)40 nC
Input Capacitance (Ciss) (Max)1760 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseSOT-669, SC-100
Package Length5 mm
Package NameSPPAK
Package Width6 mm
Power Dissipation (Max)69.4 W, 5 W
Rds On (Max)8 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4 V

Pricing

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CAD

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Documents

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    XP6NA8R0CST | YAGEO | Zenode.ai