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Description

General part information

APT25SM120S

SICFET N-CH 1200V 25A D3

Technical Specifications

Parameters and characteristics for this part

SpecificationAPT25SM120S
Current - Continuous Drain (Id) (Tc)25 A, 25 A
Drain to Source Voltage (Vdss)1200 V
FET TypeN-Channel
Gate Charge (Max)72 nC
Mounting TypeChassis Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseD-3 Module
Package NameD3
Power Dissipation (Max)175 W
Rds On (Max)175 mOhm
TechnologySiCFET (Silicon Carbide)
Vgs(th) (Max)2.5 V

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