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SDS120J015H3-ISATH

SDS120J015H3-ISATH

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Sanan Power Semiconductor

DIODE SIL CARB 1200V 51A TO2472L

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SDS120J015H3-ISATH

SDS120J015H3-ISATH

Active
Sanan Power Semiconductor

DIODE SIL CARB 1200V 51A TO2472L

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Description

General part information

SDS120J015H3-ISATH

DIODE SIL CARB 1200V 51A TO2472L

Technical Specifications

Parameters and characteristics for this part

SpecificationSDS120J015H3-ISATH
Capacitance1182 pF
Current - Average Rectified (Io)51 A
Current - Reverse Leakage45 µA
Mounting TypeThrough Hole
Operating Temperature - Junction (Max)175 °C
Operating Temperature - Junction (Min)-55 °C
Package / CaseTO-247-2
Package NameTO-247-2L
Reverse Recovery Time (trr)0 ns
SpeedNo Recovery Time
Speed - Fast Recovery (Minimum)500 mA
Speed - Recovery Current500 mA, 500 mA
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)1200 V
Voltage - Forward (Vf) (Max)1.5 V

Pricing

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CAD

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Documents

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