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Description

General part information

NDS8410

MOSFET N-CH 30V 10A 8SOIC

Technical Specifications

Parameters and characteristics for this part

SpecificationNDS8410
Current - Continuous Drain (Id) (Ta)10 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)60 nC
Input Capacitance (Ciss) (Max)1350 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package Length0.154 in
Package Name8-SOIC
Package Width3.9 mm
Power Dissipation (Max)2.5 W
Rds On (Max)15 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)1.5 V

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CAD

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