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71V35761 - Block Diagram

71V35761SA166BQG8

Obsolete
Renesas Electronics Corporation

3.3V 128K X 36 SYNCHRONOUS PIPELINED BURST SRAM W/3.3V I/O

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71V35761 - Block Diagram

71V35761SA166BQG8

Obsolete
Renesas Electronics Corporation

3.3V 128K X 36 SYNCHRONOUS PIPELINED BURST SRAM W/3.3V I/O

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Description

General part information

71V35761 Series

The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM.

Technical Specifications

Parameters and characteristics for this part

Specification71V35761SA166BQG8
Access Time3.5 ns
Clock Frequency166 MHz
Memory Depth128 K
Memory FormatSRAM
Memory Interface (Type)Parallel
Memory Size4.5 Mbit
Memory TypeVolatile
Memory Width36 bit
Mounting TypeSurface Mount
Operating Temperature (Max)70 °C
Operating Temperature (Min)0 °C
Package / Case165-TBGA
Package Length13 mm
Package Name165-CABGA
Package Width15 mm
TechnologySRAM - Synchronous, SDR
Voltage - Supply (Maximum)3.465 V
Voltage - Supply (Minimum)3.135 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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CAD

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Documents

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