Description
General part information
ISC010N06NM5ATMA1
Infineon’sOptiMOS™ 5 Power MOSFET 60VinSuperSO8 package(ISC010N06NM5) offers low on-state resistance RDS(on)at 25˚C and 175˚C, and high continuous current (up to 330 A). Infineon's OptiMOS™ MOSFETs in SuperSO8 package extend OptiMOS™ 3 and 5 product portfolio and enable higher power density in addition to improved robustness, responding to the need for lower system cost and increased performance. Low reverse recovery charge (Qrr) improves the system reliability by providing a significant reduction of voltage overshoot, which minimizes the need for snubber circuits, resulting in less engineering cost and effort.
Technical Specifications
Parameters and characteristics for this part
| Specification | ISC010N06NM5ATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 39 A |
| Current - Continuous Drain (Id) (Tc) | 330 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On) | 6 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 143 nC |
| Input Capacitance (Ciss) (Max) | 11000 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerTDFN |
| Package Name | PG-TSON-8-3 |
| Power Dissipation (Max) | 214 W, 3 W |
| Rds On (Max) | 1.05 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3.3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources