SI2333DS-T1-GE3
ObsoleteVishay Dale
POWER MOSFET, P CHANNEL, 12 V, 4.1 A, 0.025 OHM, SOT-23, SURFACE MOUNT
SI2333DS-T1-GE3
ObsoleteVishay Dale
POWER MOSFET, P CHANNEL, 12 V, 4.1 A, 0.025 OHM, SOT-23, SURFACE MOUNT
Description
General part information
SI2333DS-T1-GE3
POWER MOSFET, P CHANNEL, 12 V, 4.1 A, 0.025 OHM, SOT-23, SURFACE MOUNT
Technical Specifications
Parameters and characteristics for this part
| Specification | SI2333DS-T1-GE3 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 4.1 A |
| Drain to Source Voltage (Vdss) | 12 V |
| Drive Voltage (Max Rds On) | 1.8 V |
| Drive Voltage (Min Rds On) | 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Max) | 18 nC |
| Input Capacitance (Ciss) (Max) | 1100 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-236-3, SOT-23-3, SC-59 |
| Package Name | SOT-23-3 (TO-236) |
| Power Dissipation (Max) | 750 mW |
| Rds On (Max) | 32 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 8 V |
| Vgs(th) (Max) | 1 V |
Pricing
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