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CONEC Elektronische Bauelemente GmbH-4HDD26PCM99B20XE null null

SISS5110DN-T1-GE3

Active
Vishay Dale

TRANS MOSFET N-CH 100V 13.4A 8-PIN POWERPAK 1212-S EP T/R

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CONEC Elektronische Bauelemente GmbH-4HDD26PCM99B20XE null null

SISS5110DN-T1-GE3

Active
Vishay Dale

TRANS MOSFET N-CH 100V 13.4A 8-PIN POWERPAK 1212-S EP T/R

Find alt

Description

General part information

SISS5110DN-T1-GE3

TRANS MOSFET N-CH 100V 13.4A 8-PIN POWERPAK 1212-S EP T/R

Technical Specifications

Parameters and characteristics for this part

SpecificationSISS5110DN-T1-GE3
Current - Continuous Drain (Id) (Ta)13.4 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On)7.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)20 nC
Input Capacitance (Ciss) (Max)920 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CasePowerPAK® 1212-8S
Package NamePowerPAK® 1212-8S
Power Dissipation (Max)4.8 W, 56.8 W
Rds On (Max)8.9 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max)4 V

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    SISS5110DN-T1-GE3 | Vishay Dale | Zenode.ai