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SI6415DQ-T1-BE3

SI6415DQ-T1-BE3

Obsolete
Vishay Dale

P-CHANNEL 30-V (D-S) MOSFET

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SI6415DQ-T1-BE3

SI6415DQ-T1-BE3

Obsolete
Vishay Dale

P-CHANNEL 30-V (D-S) MOSFET

Find alt

Description

General part information

SI6415DQ-T1-BE3

P-CHANNEL 30-V (D-S) MOSFET

Technical Specifications

Parameters and characteristics for this part

SpecificationSI6415DQ-T1-BE3
Current - Continuous Drain (Id) (Ta)6.5 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeP-Channel
Gate Charge (Max)70 nC
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package Length0.173 in
Package Name8-TSSOP
Package Width4.4 mm
Power Dissipation (Max)1.5 W
Rds On (Max)19 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)1 V

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources