OPV332
ActiveTT Electronics/BI
VERTICAL CAVITY SURFACE EMITTING LASER IN T-1 PACKAGE
OPV332
ActiveTT Electronics/BI
VERTICAL CAVITY SURFACE EMITTING LASER IN T-1 PACKAGE
Description
General part information
OPV332
Laser Diode 850nm 1.5mW 20mA Radial, 3mm Dia (T-1)
Technical Specifications
Parameters and characteristics for this part
| Specification | OPV332 |
|---|---|
| Current Rating | 0.02 A |
| Package Diameter | 3 mm |
| Package Name | Radial |
| Power (Watts) | 1.5 mW |
| Wavelength | 850 nm |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
RoHs Letter for Juarez Site
Supplier Quality Requirements Manual
Optoelectronics One Pager
Conflict Minerals Policy for Juarez Site
Optoelectronics for Medical Tri-Fold
Optoelectronics Product Selection Guide
Lead Free and RoHs Compliance for Juarez Site
Custom Optoelectronic Assemblies Tri-Fold
REACH Compliance for Juarez Site
OPV332
RoHs 3 Declaration Form for Juarez Site
Quality Manual for Juarez Site
Juarez ISO 9001
App Note 221: Laser Safety Bulletin - OPV Series, VCSEL
Declaration of Mineral Conflict Free Material for Juarez Site