Description
General part information
S70GL02GT12FHIV10
S70GL02GT12FHIV10 is a S70GL02GT 2Gb MIRRORBIT™ flash memory device is fabricated on 45-nm MIRRORBIT™ process technology. This device offers a fast page access time of 20ns with a corresponding random access time of 110ns. It features a write buffer that allows a maximum of 256 words/512bytes to be programmed in one operation, resulting in faster effective programming time than standard single byte/word programming algorithms. This makes the device an ideal product for today’s embedded applications that require higher density, better performance and lower power consumption.
Technical Specifications
Parameters and characteristics for this part
| Specification | S70GL02GT12FHIV10 |
|---|---|
| Access Time | 120 ns |
| Memory Depth (Option 1) | 256 M |
| Memory Depth (Option 2) | 128 M |
| Memory Format | FLASH |
| Memory Interface (Type) | Parallel |
| Memory Organization | 128M x 16, 256M x 8 |
| Memory Size | 2 Gbit |
| Memory Type | Non-Volatile |
| Memory Width (Option 1) | 8 bit |
| Memory Width (Option 2) | 16 bit |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 85 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | 64-LBGA |
| Package Length | 11 mm |
| Package Name | 64-FBGA |
| Package Width | 13 mm |
| Technology | FLASH - NOR |
| Voltage - Supply (Maximum) | 3.6 V |
| Voltage - Supply (Minimum) | 1.65 V |
Pricing
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CAD
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Documents
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