Specification	RS1E320GNTB

Current - Continuous Drain (Id) (Ta)	38 A
Current - Continuous Drain (Id) (Tc)	80 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	42.8 nC
Input Capacitance (Ciss) (Max)	2850 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-PowerTDFN
Package Name	8-HSOP
Power Dissipation (Max)	34 W, 3 W
Rds On (Max)	1.9 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

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