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SI2377EDS-T1-GE3

SI2377EDS-T1-GE3

Active
Vishay Dale

POWER MOSFET, P CHANNEL, 20 V, 4.4 A, 0.05 OHM, SOT-23, SURFACE MOUNT

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SI2377EDS-T1-GE3

SI2377EDS-T1-GE3

Active
Vishay Dale

POWER MOSFET, P CHANNEL, 20 V, 4.4 A, 0.05 OHM, SOT-23, SURFACE MOUNT

Find alt

Description

General part information

SI2377EDS-T1-GE3

POWER MOSFET, P CHANNEL, 20 V, 4.4 A, 0.05 OHM, SOT-23, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

SpecificationSI2377EDS-T1-GE3
Current - Continuous Drain (Id) (Tc)4.4 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On)1.5 V
Drive Voltage (Min Rds On)4.5 V
FET TypeP-Channel
Gate Charge (Max)21 nC
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-236-3, SOT-23-3, SC-59
Package NameSOT-23-3 (TO-236)
Power Dissipation (Max)1.25 W, 1.8 W
Rds On (Max)61 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)8 V
Vgs(th) (Max)1 V

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