CMH01(TE12L,Q,M)
ActiveToshiba Semiconductor and Storage
DIODE STANDARD 200V 3A MFLAT
CMH01(TE12L,Q,M)
ActiveToshiba Semiconductor and Storage
DIODE STANDARD 200V 3A MFLAT
Description
General part information
CMH01(TE12L,Q,M)
DIODE STANDARD 200V 3A MFLAT
Technical Specifications
Parameters and characteristics for this part
| Specification | CMH01(TE12L,Q,M) |
|---|---|
| Current - Average Rectified (Io) | 3 A |
| Current - Reverse Leakage | 10 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction (Max) | 150 °C |
| Operating Temperature - Junction (Min) | -40 °C |
| Package / Case | SOD-128 |
| Package Length | 2.4 mm |
| Package Name | M-FLAT |
| Package Width | 3.8 mm |
| Reverse Recovery Time (trr) | 100 ns |
| Speed - Fast Recovery (Maximum) | 500 ns |
| Speed - Fast Recovery (Minimum) | 200 mA |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) | 980 mV |
Pricing
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CAD
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