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4N65L

4N65L

Active
UMW

MOSFET N-CH 650V 4A DPAK

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4N65L

4N65L

Active
UMW

MOSFET N-CH 650V 4A DPAK

Find alt

Description

General part information

4N65L

MOSFET N-CH 650V 4A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification4N65L
Current - Continuous Drain (Id) (Tc)4 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Package NameTO-252 (DPAK)
Power Dissipation (Max)33 W
Rds On (Max)2.7 Ohm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max)4 V

Pricing

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CAD

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